期刊名称：Studia Universitatis Moldaviae: Stiinte Exacte si Economice
印刷版ISSN：1857-2073
电子版ISSN：2345-1033
出版年度：2011
期号：2(42)
页码：84-88
出版社：Moldova State University
摘要：Evolution of growth of the disperse particles of AlN which has been grown up on substrates of silicon during formation of a continuous layer are studies by AFM (Atomic Force Microscopy ) method. Layers have been grown up by HVPE (Hydride Vapor Phase Epitaxy) method at 1100 o C. It is established: a) nunucleation occurs according to three dimensional model; b) layers are formed of two categories of disperse particles; c) growth rate of categories differ; d) at an initial stage of growth there is a latent period of time when superficial concentration of disperse particles remains to a constant.
