期刊名称：Studia Universitatis Moldaviae: Stiinte Exacte si Economice
印刷版ISSN：1857-2073
电子版ISSN：2345-1033
出版年度：2011
期号：7(47)
页码：100-103
出版社：Moldova State University
摘要：Thin layers of CdS were deposited on InP (100) substrates with a (3...5) arc degrees misorientation relative to (110) using water solutions of CdSO 4 , (NH 4 ) 2 SO 4 , NH 4 OH , NH 4 Cl and CS(NH 2 ) 2 for synthesis. The morphology, atomic composition, photoluminescence and electrical properties of the deposited layers were investigated. The morphology of the CdS layers is characterized by a granular structure that is not changing under thermic treatment. A band in the energy interval (1,55 – 3,1) eV at 77 K with the maximum at 2,282 eV is observed in the photoluminescence spectra of the thin layers. Under thermic treatment from 200°C to 500°C in hydrogen the concentration of charge carriers is increasing from 2.10 17 cm -3 to 2.10 18 cm -3
