期刊名称：Studia Universitatis Moldaviae: Stiinte Exacte si Economice
印刷版ISSN：1857-2073
电子版ISSN：2345-1033
出版年度：2011
期号：7(47)
页码：117-121
出版社：Moldova State University
摘要：The paper is focused on analysis of structural transformations and investigations on electrical and photoelectrical properties of GaSe and GaSe:Cd semiconductors. The XRD analysis demonstrated that Cd atoms are homogeneously distributed in GaSe. It has been also shown that Cd atoms form localized levels which increase the absorption for hν<E g as well as increase holes' concentration up to 1.42·10 17 cm -3
