期刊名称：Studia Universitatis Moldaviae: Stiinte Exacte si Economice
印刷版ISSN：1857-2073
电子版ISSN：2345-1033
出版年度：2012
期号：2(52)
页码：70-75
出版社：Moldova State University
摘要：GaSe monocrystals doped with 0,025%, 0,068%, 0,49% at. Eu, optica lly transparent in wavelengths domain λ>650 nm, were grown by Bridgman method. In addition to structural defects in ...Se-Ga-Ga-Se... stratified package, introduction of the Eu impurities in GaSe leads to the formation of Eu 3+ luminescence centers. On the elementary package surface of GaSe doped with 0,49% at. Eu, there are neutral Eu atoms, what by thermic treatment at 400÷450oC are forming a Eu 2 O 3 and Ga 2 O 3 composite layer.
