期刊名称：Studia Universitatis Moldaviae: Stiinte Exacte si Economice
印刷版ISSN：1857-2073
电子版ISSN：2345-1033
出版年度：2013
期号：2(62)
页码：50-53
出版社：Moldova State University
摘要：Homojonc.iunea p + -p - -n + InP cu .i f.r. strat frontal nCdS a fost ob.inut. aplicand metoda de epitaxie din faza gazoas. .n sistemul In-PCl 3 -H 2 (p - InP, n + InP) .i metoda de volum cvasi.nchis (nCdS) . La studierea propriet..ilor electrice .i fotoelectrice ale acestor structuri s-a constatat c. fotosensibilitatea a crescut cu dou. ordine, iar eficien.a CS este de 12% pentru homostructura cu strat frontal nCdS. Aceasta se datoreaz. mic.or.rii recombin.rii purt.torilor de sarcin. minoritari la suprafa.. .i particularit..ilor propriet..ilor electrice .i fotoelectrice ale acestor structuri
其他摘要：p + -p - -n + InP homo-junction with or without nCdS frontal layer was obtained by gaseous phase epitaxy meth od in a In-PCl 3 -H 2 (p - InP, n + InP) system and by quasi-closed volume method (nCdS). From the studies of electrical and photo- electrical properties of these structures it has been established that their photo-sensitivity increases by two orders of magnitude and the SC efficiency is of 12% for the homo -structure with nCdS frontal layer, due to the diminishing of minority charge carriers surface recombination and the peculiarities of electrical and photo -electrical properties of these structures
关键词：homojonc.iune; fosfur. de indiu; celul. solar.; procedeu tehnologic; strat epitaxial
其他关键词：homojunction; indium phosphide; solar cells; technological procedure; epitaxial layer
