期刊名称：Studia Universitatis Moldaviae: Stiinte Exacte si Economice
印刷版ISSN：1857-2073
电子版ISSN：2345-1033
出版年度：2015
期号：2(82)
页码：72-75
出版社：Moldova State University
摘要：Au fost studiate propriet.. ile electrice .i fotoelectrice ale heterojonc.iunilor nCdS-pInP cu .i f.r. strat epitaxial inter- mediar p o InP. S-a stabilit c. la polariz.ri directe .n mecanismul de transport al curentului predomin. procesele de recom- binare .n regiunea de sarcin. spa.ial.. La polariz.ri inverse predomin. procesele de tunelare. Prezen.a stratului epitaxial p o InP depus repetat m.re.te I SC pan. la 28,2 mA·cm -2 , U CD pan. la 0,780 V, iar eficien.a conversiei energiei pan. la 15% la 300 K .i iluminare 100 mW/cm 2 . Fotosensibilitatea CF nCdS-p o InP-pInP corespunde intervalului λ=550...950 nm cu un maximum plat localizat .n intervalul λ=700...850 nm.
其他摘要：Electrical and photoelectrical properties of nCdS-pInP hetero-junctions with and without intermediate p o InP epitaxial layer were studied. It was established that the current flow mechanism at direct biases is determined mainly by the recombi- nation processes in the space charge region of the junction. At the reverse biases the tunneling processes are predominant. The presence of p o InP layer leads to the photo-electrical parameters enhancing of hetero-junction: short circuit current increases up to 28,2 mA·cm -2 , open circuit voltage up to 0,780V and the efficiency of solar energy conversion up to 15 % (at 300 K and illumination of 100mw/cm 2 ). The photo-sensitivity of nCdS- p o InP -pInP is in the wavelength region of λ= 550-950nm with a maximum localized to λ =700-850nm
