期刊名称：Studia Universitatis Moldaviae: Stiinte Sociale
印刷版ISSN：1814-3199
电子版ISSN：2345-1017
出版年度：2015
卷号：2
期号：82
页码：72-75
出版社：Moldova State University
摘要：Au fost studiate proprietăţile electrice şi fotoelectrice ale heterojoncţiunilor nCdS-pInP cu şi fără strat epitaxial intermediarpoInP. S-a stabilit că la polarizări directe în mecanismul de transport al curentului predomină procesele de recombinareîn regiunea de sarcină spaţială. La polarizări inverse predomină procesele de tunelare. Prezenţa stratului epitaxialpoInP depus repetat măreşte ISC până la 28,2 mA·cm-2, UCD până la 0,780 V, iar eficienţa conversiei energiei până la 15%la 300 K şi iluminare 100 mW/cm2. Fotosensibilitatea CF nCdS-poInP-pInP corespunde intervalului λ=550...950 nm cuun maximum plat localizat în intervalul λ=700...850 nm.
其他摘要：Electrical and photoelectrical properties of nCdS-pInP hetero-junctions with and without intermediate p o InP epitaxial layer were studied. It was established that the current flow mechanism at direct biases is determined mainly by the recombi- nation processes in the space charge region of the junction. At the reverse biases the tunneling processes are predominant. The presence of p o InP layer leads to the photo-electrical parameters enhancing of hetero-junction: short circuit current increases up to 28,2 mA·cm -2 , open circuit voltage up to 0,780V and the efficiency of solar energy conversion up to 15 % (at 300 K and illumination of 100mw/cm 2 ). The photo-sensitivity of nCdS- p o InP -pInP is in the wavelength region of λ= 550-950nm with a maximum localized to λ =700-850nm
