期刊名称：Studia Universitatis Moldaviae: Stiinte Sociale
印刷版ISSN：1814-3199
电子版ISSN：2345-1017
出版年度：2015
卷号：7
期号：87
页码：9-12
出版社：Moldova State University
摘要：A fost studiat. influen. a trat.rii termice la temperaturi ridicate .n azot sau .n vid asupra propriet..ilor straturilor de GaN depuse pe siliciu prin metoda reac. iilor chimice de transport .n sistemul (H 2 -NH 3 -HCl-Ga-Al), (HVPE). .n spec- trele de fotoluminescen.. (FL), la 300 K, ale straturilor netratate se eviden. iaz. dou. fa.ii de recombinare radiant., cu maximele la 370 .i 555 nm. La tratarea .n azot intensitatea fa.iei 370 nm cre.te, iar la tratarea .n vid – descre.te. Inten- sitatea benzii galbene (555 nm), la tratare .n ambele medii, scade neesen. ial. Se demonstreaz. c. parametrii electrici ai straturilor pot fi, de asemenea, modifica.i prin metoda trat.rii termice .n azot sau .n vid, precum .i prin durata de tratare
其他摘要：The influence of high temperature annealing in nitrogen and vacuum of GaN layers deposited by chemical reactions transport (HVPE) in (H 2 -NH 3 -HCl-Ga-Al) system on their properties was studied. In the photoluminescence (PL) spectra at 300 K of the untreated layers two recombination radiation bands with the plats at 370 nm and 555 nm were revealed. At the layers heat treatment the intensity of the radiation band at 370 nm increases when at the intensity of the yellow band (555 nm) decreases not significantly at the treatment in the both ambiances. It was shown that the electrical parameters could as well be controlled by using heat treatment in nitrogen and vacuum and this depends on the annealing duration
