期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2015
卷号：4
期号：1
页码：18543
DOI：10.15680/IJIRSET.2015.0401018
出版社：S&S Publications
摘要：Memories are a core part of most of the electronic systems. Performance in terms of speed and powerdissipation is the major areas of concern in today’s memory technology. In this paper SRAM cells based on 6T, 7T, 8T,and 9T configurations are compared on the basis of performance for read and write operations. Studied results showthat the power dissipation in 7T SRAM cell is least among other configurations because this structure uses a single bitfor both read and write operations. This SRAM cell also provides the least power delay product among differentstudied SRAM configurations. Performance in terms of power dissipation and power delay product are least for 7TSRAM cell among the other SRAM configurations in 90nm CMOS technology.
关键词：SRAM; Power; Delay; Power delay product; Write; Read
