期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2015
卷号：4
期号：4
页码：1951
DOI：10.15680/IJIRSET.2015.0404108
出版社：S&S Publications
摘要：Metal-insulator transition in doped semiconductors is investigated in the presence of intense magnetic field. Using Tho mas Fermi screening functio n and a screened coulomb potential in the Hamiltonian, a two parameter variational calculation leads to metallization. The correlation effect among the electrons is considered through an effective mass threat depends on the spatial separation between impurities
关键词：Semiconductors; Magnetic field effect; Metal - insulator transition
