期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2015
卷号：4
期号：8
页码：6971
DOI：10.15680/IJIRSET.2015.0408295
出版社：S&S Publications
摘要：Metal-insulator transition in doped semiconductors is investigated in the presence of intense magnetic field. Using Thomas Fermi screening function and a screened coulomb potential in the Hamiltonian, a two parameter variational calculation leads to metallization. The correlation effect amo ng the electrons is considered through an effective mass threat depends on the spatial separation between impurities.
关键词：Semiconductors; Magnetic field effect; Metal - insulator transition;Si
