期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2015
卷号：4
期号：12
页码：12788
DOI：10.15680/IJIRSET.2015.0412120
出版社：S&S Publications
摘要：Scaling is one of the key factor of any new technology and it governs the design metrics of the completetechnology. With the scaling up to sub-micro region, single-gate MOSFETs has served the purpose but as designingmoves down in ultra sub-micro region, the further scaling of single gate MOSFETs leads to a number of Short ChannelEffects which directly affects the various performance criteria and to resolve these effects, Multi-gate MOSFETs aredesigned and one of the most widely used and efficient is FinFET.This paper contains the brief description of FinFET, its structure overview, features and some of the latest work that hasbeen carried out using FinFET in ultra sub-micro region i.e. beyond 22nm scale and its comparison with the previousexisted technologies.
关键词：FinFET; Non-planer structure; Digital circuits and memories; Threshold voltage; Fin width
