期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2016
卷号：5
期号：2
页码：2092
DOI：10.15680/IJIRSET.2016.0502059
出版社：S&S Publications
摘要：Vertical directional solidification (VDS) under the controlled growth conditions and parameters hasbeen operated to solidify antimonide (Sb) based bulk crystals for the entire detached/contactless growths. In groundexperiments, Crystal qualities have been studied in VDS, under the effect of reduced melt convection. Recentdetached crystals grown by VDS have been studied for quality identifications: InSb1-x Bix, InSb1-xNx, GaSb1-xSex, andGaSb1-xMnx. Detachment is a key factor for the dopant distribution in microhomogeneities under terrestrial condition.Dopant distributions along the transverse and longitudinal axis of entire detached ingots have been measured. Crystalproperties had confirmed that the homogeneous substrates, higher structural quality and reduction in convection intomelt, at the macro and micro level. VDS crystal properties are analogous to the crystals grown in microgravity.Methodology of solidification seems to be the promising technology for the device grade bulk crystals. VDS crystalgrowth system has prospects as the commercially profitable system.
