期刊名称：Balkan Journal of Electrical & Computer Engineering
印刷版ISSN：2147-284X
出版年度：2014
卷号：2
期号：1
页码：2
出版社：Kirklareli University
摘要：The use of a solar cell in space requires the knowledge of its behavior under high-energy partial radiation. This radiation in space produces defects in semiconductor that cause a reduction in solar cell power output. In this paper we present the method for predicting the behavior of a solar cell for satellite applications. Modeling has been performed for several types of GaAs and GaInP single cells and results are compared with experimental data obtained for electron and proton irradiations.
