摘要：In this paper we discuss the present state of the work in memcapacitive systems, a different class of memory device, that shows memory in theircurrent-voltage characteristics mostly through the non pinched hysteresis loop. Charge and voltage controlled memcapacitive system realizablefrom metamaterial medium with metal layer embedding, from charge transport through nanopore, and by the vibration of strained elasticmembrane replacing one plate of the regular capacitor form the part of present study
