期刊名称：Iranica Journal of Energy and Environment (IJEE)
印刷版ISSN：2079-2115
电子版ISSN：2079-2123
出版年度：2012
卷号：4
期号：3145
页码：329-332
语种：English
出版社：Noshirvani University of TEchnology
摘要：In dry thermal oxidation process with Si, the growth rate of the initial parts of the reaction is currently modeled with additional terms; besides the usual linear parabolic was time dependent. However, due to limitation in the process set up, it was found in literature and in patent; these methods did not produce oxides less than 1.5 nm thick, often assumed equal to the native thickness. Attempt made to grow oxides in a furnace with dry oxygen, including cycles of cleaning and annealing in Ar. The effects limit the thickness to about 1.5 nm was investigated. These oxides were evaluated for the resulting quality of the interface of the oxides, with low temperature layer-by-layer methods.
