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  • 标题:Enhancement of Voltage Profile by using Fixed Capacitor- Thyristor Controlled Reactor (FC-TCR)
  • 本地全文:下载
  • 作者:Ghanshyam Vishwakarma ; Nitin Saxena
  • 期刊名称:International Journal of Electrical, Electronics and Computer Engineering
  • 电子版ISSN:2277-2626
  • 出版年度:2013
  • 卷号:2
  • 期号:2
  • 页码:5
  • 语种:English
  • 出版社:RESEARCH TREND
  • 摘要:ABSTRACT: This paper addresses improving the voltage stability limit of power flow between two different regions in an electric power system using the Fixed capacitor Thyristor controlled reactor (FCTCR) or Static Var Compensator (SVC). Modelling and simulation of Static Var Compensator (SVC) for power system stability enhancement and improvement of power transfer capability have been presented in this paper. First, power flow results are obtained and then power (real and reactive power) profiles have been studied for an uncompensated system and then compared with the results obtained after compensating the system using the above-mentioned SVC device. The simulation results demonstrate the performance of the system in improving the power profile and thereby voltage stability of the same. All simulations have been carried out in MATLAB/SIMULINK environment. A methodology for determining the power flow margin is simply briefed.
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