摘要：Compared with the conventional strained quantum well, the InGaAs/GaAsP strain compensated quantum well (SCQW) has better optical properties, as the well layer and the barrier layer lattice mismatch with each other which results in the introduction of stress. In this paper, we adopted the Kohn-Luttinger Hamiltonian, conducted some theoretical calculations using the transfer matrix method, and finally verified the following change trend of the InGaAs quantum well following the In-group through experiments: the growth of the low In-group can improve the epitaxial flatness of the active area; the growth of the high In-group can increase the wavelength as well as the strain. In this paper, we adopted the AlGaAs barrier material instead of the GaAsP, made an analysis on the level changes of the compensation quantum well, and successfully fostered the strain compensated quantum well structure using the metal-organic chemical vapor deposition (MOCVD) system which had better optical properties compared with the strained quantum wells.
