期刊名称：Studia Universitatis Moldaviae: Stiinte Exacte si Economice
印刷版ISSN：1857-2073
电子版ISSN：2345-1033
出版年度：2009
期号：6(26)
页码：226-230
出版社：Moldova State University
摘要：In this work the possibility of elaboration of the radiation receptors based on InSe is demonstrated. Particularly theroentgen resistors, spectral and polarizational photoresistors based on layered InSe are studied. The doping of the InSecrystals with 0.1%at. of Cu leads to the growth of ~8 time of the photosensibility in the UV region (hν>3,0 eV) comparingto the InSe photoresistor. None equilibrium charge carriers in the photoresistor based on monocrystalline InSe isrecombining through two recombinatory levels with live times τ1 = 30·10-5 s, τ1 = 9,2·10-5 s. In the InSe with 0.1%at. Cuphotoresistor photocurrent in the dark is decreasing accordingly to a single exponent with characteristic time 1,12·10-14 s.Compounds of type InSe that are strongly mechanic and optic anisotropic and doped with Cu and Cd are serving as basefor the preparation of the photoreceptors with polarizational sensibility with narrow spectral band.From the dependences of the intensity of the currents depending of the X radiation dose in the probes InSe< Cd 0,05 %at.> is observed a sublinear tendency for I-U characteristics, which indicates a growth of the concentration of the defectsin the InSe crystals together the the growth of the radiation dose. The formation process of the defects is an inertial oneand for the InSe is reaching a stationary size during ~30÷35s
