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  • 标题:Carbon Nano Tubes in Field Effect of Transistor
  • 本地全文:下载
  • 作者:Reena Rani
  • 期刊名称:International Journal of Innovative Research in Computer and Communication Engineering
  • 印刷版ISSN:2320-9798
  • 电子版ISSN:2320-9801
  • 出版年度:2016
  • 卷号:4
  • 期号:2
  • 页码:1383
  • DOI:10.15680/IJIRCCE.2016.0402091
  • 出版社:S&S Publications
  • 摘要:Carbon Nanotube Field Effect Transistors (CNTFET) are promising nano - scaled devices for implementing high performance very dense and low power circuits. A Carbon Nanotube Field Effe ct Transistor refers to a FET that utilizes a single CNT or an array of CNT's as the channel material instead of bulk silicon in the traditional MOSFET structure. The core of a CNTFET is a carbon nanotube. The structure, operation and the characteristics o f different types of CNTFET's have been discussed. The operation, dc characteristics of CNTFETs and analysis of the performance of various characteristics have been presented
  • 关键词:CNTFET; Carbon nanotubes; Field effect transistors; Nanoelectronics; characteristics
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