期刊名称：International Journal of Innovative Research in Computer and Communication Engineering
印刷版ISSN：2320-9798
电子版ISSN：2320-9801
出版年度：2016
卷号：4
期号：4
页码：6766
DOI：10.15680/IJIRCCE.2016.0404069
出版社：S&S Publications
摘要：Dueto scaling limitations, a conventional MOSFET cannot be used in high power applications.So for increasing RF application demand, a MOSFET was created known as VDMOSFET.This paper gives a brief review of VDMOSFET's construction and itsworking.Various parameters affecting its operation havealso been discussed
