期刊名称：International Journal of Innovative Research in Computer and Communication Engineering
印刷版ISSN：2320-9798
电子版ISSN：2320-9801
出版年度：2016
卷号：4
期号：4
页码：5037
DOI：10.15680/IJIRCCE.2016.0404114
出版社：S&S Publications
摘要：Single - electron transistor (SET) is a vital element of todays research world of nanotechnology which can offer high operating speed and low power consumption. Scalability implies that the performance of electronic devices increases with a decrease of the device dimensions. Single electron transistor [SET] is a recent nanoscaled switching device as it keeps its scalability even on an atomic scale and can also control the movement of a single electron. As Power consumption is roughly analogous to number of electron transferred from voltage source to the ground in diverse logic operations. Thus, the single - electron transistor [SET] is generally used as an ULSI element t o minimize the power consumption of ULSIs. Therefore, the Single electron transistor [SET] can give low power consumption and the controlled tunnelling of a single electron forms its high operating speed. The SET's physical size is quite small and as its size is reduced, its performance, such as ON - OFF current ratio, upgrades. Thus,the SET can be taken as promising device for various large scale and low - power integrated circuits . The theoretical study of single electronics also involves Coulomb Blockade, Kondo Effect that is beneficial in a number of applications are also discussed here. The main objective of this paper is to discuss about the fundamental physics of nano electronic device 'Single electron transistor [SET] which is able of controlling the transfer of a single electron
关键词：SET; structure of SET; Coulomb blockade; single electron tunnelling; Quantum Dot
