期刊名称：International Journal of Innovative Research in Computer and Communication Engineering
印刷版ISSN：2320-9798
电子版ISSN：2320-9801
出版年度：2016
卷号：4
期号：4
页码：5154
DOI：10.15680/IJIRCCE.2016.0404139
出版社：S&S Publications
摘要：The physical features of bulk MOSFETs is aggressively scaled down and these typical MOSFETs devices will shortly be experiencing slight advancement due to the scaling down. In order to achieve performance improvements,new alternative architectures are demanded. As the scaling of MOSFET into sub - 50nm regime, SOI and DG - MOSFET are anticipated to replace conventional bulk MOSFET. These recent MOSFET devices will prove as strong competitors for RF applications in wireless substrate is proving itself as a bright candidate for sub - 40nm technology nodes. DG - MOSFET devices gives better control of threshold vo ltage(Vt) by employing electrostatic coupling from the two gates on each side of the channel.The latest developments are largely based on noble materials and new structures that comprise strained Si, high - K/metal gate, multiple gates, SOI technology. In t he proposed paper all the above mentioned technologies will be discussed which will definitely bring change to the present CMOS technology
