期刊名称：International Journal of Engineering Business Management
印刷版ISSN：1847-9790
电子版ISSN：1847-9790
出版年度：2012
卷号：4
期号：Godište 2012
页码：4-28
DOI：10.5772/54921
语种：English
出版社：InTech
摘要：The RF band pass filters are important for wireless communication applications. They can be realized using Thin Film Bulk Acoustic Resonator (TFBAR).TFBAR is designed using Aluminium Nitride (AlN) and electrodes of piezoelectric material are made with Platinum (Pt).Various modelling techniques has been used for realizing three layered TFBAR structure. Modified Butter worth‐van Dyke model (MBVD) is one used for numerical simulation of AlN film and thin electrodes. The result shows that Lm, Cm, Rm and Co model is perfectly applicable for predicting the response of TFBAR. The proposed design is realized by connecting three series and two shunt FBARs in ladder configuration. In the present work, the filter has been designed for a bandwidth of 270 MHz at ‐3 dB. The minimum insertion loss of ‐0.9 dB and return loss of ‐25 dB are obtained for VSWR ≤ 2 at resonance frequency.
关键词：TFBAR; MBVD; ladder; insertion loss; return loss
