期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2014
卷号：3
期号：5
页码：12949
出版社：S&S Publications
摘要：SRAM area is expected to exceed 90% of overall chip area because of the demand for higherperformance, lower power, and higher integration. To increase memory density, memory bitcells are scaled to reducetheir area by 50% each technology node. High density SRAM bitcells use the smallest devices in a technology, makingSRAM more vulnerable for variations. This variation effect the stability of SRAM. This paper investigates Staticrandom access memory (SRAM) stability in hold/standby, read and write mode. In this paper different techniques tofind Static Noise Margin (SNM), Read margin and write margin are discussed. The effect of supply voltage, transistorscaling, word line voltage, threshold voltage, and temperature on SRAM stability is analysis in Standby and ReadMode. From 0.7V to 1.2V the read stability increase 231% and Standby stability increase 135%. When the cell ratiochanges from 1 to 3 the stability of SRAM during read mode gets doubled. This paper also investigate the DataRetention Voltage(DRV) during standby and read mode which is the minimum voltage required to hold or read data,any voltage below DRV can flip the state of SRAM. The DRV 6T SRAM in Standby mode is 0.14V and that in readmode is 0.29V.
关键词：Static Random Access Memory (SRAM); Static Noise Margin (SNM); Cell Ratio (CR); Pull up Ratio;(PR).
