期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2015
期号：NCETAS
页码：95
出版社：S&S Publications
摘要：The properties of Group III- nitrides are that they have a large and direct band gap structures. Due tothese properties, there is a large lattice mismatch among the nitride heterostructures. The large lattice mismatch resultsin strain. Polarization occurs in the heterostructure due to the strain which in turn is a cause of the generation of internalelectric field. Internal electric field creates a transition energy, that is photoluminescence .This generation of transitionenergy for AlGaN/GaN quantum well and necessary calculations are discussed in this paper.In this paper finitedifference method (FDM) is used for calculating transition energy.
关键词：Quantum well (QW); finite difference method (FDM).
