期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2014
卷号：3
期号：6
页码：14018
出版社：S&S Publications
摘要：La0.7A0.3MnO3 (where, A = Sr, Ba) manganite nanostructured thin films have been grown on LAO (100)substrate using Chemical Solution Deposition (CSD) technique. The Insulator-Metal (I-M) transition temperature, TP of~368K and ~330K were obtained for LSMO and LBMO films respectively. Magnetoresistance (MR) vs. Field (H)isotherms reveal that MR enhances in the vicinit of TP and decreases at low temperature. The current-voltage (I-V)measurements carried out on these films in the temperature range 82K - 300K shows a linear I-V behavior up to 300Kfor LSMO film with a slight non-linearity at room temperature. The LBMO film exhibits an unusual non-linearity in IVcharacteristics in the temperature range studied which may be attributed to inhomogeneous distribution of strainresulting due to the nonuniform microstructure of LBMO film. Fitting of the electrical transport measurements inshows that, the Spin-flip scattering becomes dominant around TP in these film which is also reflected in MRstudies.
