期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2014
卷号：3
期号：6
页码：14079
出版社：S&S Publications
摘要：Cadmium Zinc Sulphide (CdZnS) thin film grown, with and without doping on commercial glasssubstrate using chemical bath deposition technique. The bath temperature was kept at 700C.The pH of the solution wasmaintained around 11. Two different dopant viz. SmO3 and EuO3 were used for doping. The thin films so obtained werecharacterized using XRD, UV-Spectrophotometer and Two probe methods. The XRD pattern shows nano crystallinephase with cubic and hexagonal structure. Doped film shows the broadening peaks in XRD spectra. Scherrer formulagives particle size around 9.3nm.particle size decreasing on doping. For undoped CdZnS thin film, Optical band gap ofcomes out to be 2.5 eV, whereas band gap for rare earth doped CdZnS thin film was 2.4 eV, and 2.42 eV, respectively.Thus doping decreases the band gap. Photocurrent show linear increase with applied voltage. Moreover photocurrent islarger than the dark current for the same voltage.
