期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2014
卷号：3
期号：8
页码：15641
DOI：10.15680/IJIRSET.2014.0308076
出版社：S&S Publications
摘要：Thin films of undoped and doped CdTe with thickness around 500±10nm were deposited by thermalevaporation technique onto (100) p-GaAs wafer. The effect of both Al and Sb dopant percentages (0.5, 1.5 and 2.5) andsubstrate temperatures (RT and 423K) on the optoelectronic properties of CdTe/p-GaAs heterojunction was studied. IVcharacteristics under illumination for the prepared CdTe/p-GaAs heterojunctions showed a good significantphotovoltaic effect. The value of short circuit current (Isc) for CdTe/p-GaAs heterojunction doped with Sb was higherthan that doped with Al. The effect of Al doping on the value of the open-circuit voltage (Voc) was more than Sb doped.The outcomes of all these measurements for various (Al and Sb)doping of thin CdTe deposited on GaAs were indicatedthat 2.5%Sb-doped CdTe/p-GaAs heterojunctions deposited at RT and 423K posses a good response to illuminationwhich make it a candidate for heterojunction device used as basic for fabricating photo sensors.
关键词：CdTe/p-GaAs heterojunction; Al and Sb dopant; I-V characterization.
