期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2014
期号：NCETAS
页码：19
出版社：S&S Publications
摘要：The positron annihilation technique has been employed to study the defect recovery in 40MeV alphairradiatedundoped InSb. After irradiation the sample has been subjected to an isochronal annealing over temperatureregion of 25-400OC with an annealing time of 30 minutes at each set temperature. After each annealing the Dopplerbroadening annihilation line-shape measurements are carried out at room temperature. Radiation induced defectformation in the sample due to ion implantation and its recovery with annealing temperature have been investigated.The increase in the line-shape parameter S along with defect specific parameter R in the temperature region 75 to150OC and 200 to 300OC indicate the migration of vacancies and the formation of vacancy clusters. The defects startdisappearing between 300 and 400OC.
