期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2014
期号：ICIET
页码：545
出版社：S&S Publications
摘要：In this paper, a new surface potentialmodel for dual material junctionless surrounding(DMJLSG) MOSFET is developed. As scaling of deviceshas become nanometer size, controlling the source/drainchannel is a tedious process. Formation of junction leadsto several challenges on doping concentration and thermalbudget. In order to overcome this issues junctionlessmultigate MOSFET is introduced. Junctionless is a devicethat have similar structure like conventional MOSFET butit is normally a ON device with a homogeneous dopingpolarity and a uniform doping concentration across thechannel, source and drain. Surrounding gate MOSFET hasbeen regarded as one of the promising device due to itsfiner gate controllability around the channel. Junctionlesssurrounding gate is a very simple device to design as iteliminates junction implantation and annealing. In thispaper, surface potential of dual material junctionlesssurrounding gate MOSFET is developed using Parabolicapproximation method and its performance is analysed.
关键词：JLDMSG (Junctionless dual material;surrounding gate)MOSFET; DIBL; Short channel;effects(SCE).
