期刊名称：International Journal of Advanced Research in Computer Engineering & Technology (IJARCET)
印刷版ISSN：2278-1323
出版年度：2013
卷号：2
期号：9
页码：2595-2597
出版社：Shri Pannalal Research Institute of Technolgy
摘要：A temperature prediction method of Insulated Gate Bipolar Transistor (IGBT) module based on autoregressive moving average model is proposed. Historical and current temperature datum of IGBT module is indispensable to the ARMA method, temperature time series is obtained by uniform sampling, and autoregressive (AR) model is constructed. Temperature time series prediction of IGBT module is realized by employing optimal prediction theory of autoregressive moving average (ARMA) module. Experiments results show the effectiveness and the satisfactory precision of the prediction method.
关键词：Autoregressive Model; Insulated Gate Bipolar ; Transistor; Optimal Prediction; Time Series Analysis ; Introduction
