期刊名称：International Journal of Advanced Research in Computer Engineering & Technology (IJARCET)
印刷版ISSN：2278-1323
出版年度：2013
卷号：2
期号：11
页码：2776-2787
出版社：Shri Pannalal Research Institute of Technolgy
摘要：Radiation-induced dam age in Avalanche Photodiode (APD) was shown to result from the dark current and a change of the effective doping concentration occurring within the photodiodes. In this paper a m odel to reveals the effect of ionizing radiation, temperature and the reverse bias voltage on the optical properties of APDs is built by using Vissim environm ent. This proposed model provides a mean to control the properties of APD in thermal radiation environm ents. Detectivity, noise equivalent power, excess noise factor and normalized detectivity are modeled. The tem perature effects are combined with radiation effects to formulate a rigours treatment for the APD behavior. The results are validated against published experimental work in temperature case and show good agreement.
关键词：Avalanche Photodiode; Neutron Radiation; Dark ; Current; Thermal Effects; Detectivity
