期刊名称：International Journal of Advanced Research in Computer Engineering & Technology (IJARCET)
印刷版ISSN：2278-1323
出版年度：2013
卷号：2
期号：11
页码：2788-2799
出版社：Shri Pannalal Research Institute of Technolgy
摘要：Radiation-induced dam age in Avalanche Photodiode (APD) was shown to result from the dark current and a change of the effective doping concentration occurring within the photodiodes. In this paper a m odel to reveals the effect of ionizing radiation and temperature on the performance of APDs is built by using Vissim environment. This proposed m odel provides a m ean to control the properties of APD when they are selected to operate in thermal radiation environm ents. Efficiency, sensitivity, responsitivity, and signal to noise ratio are modeled. The temperature effects are combined with radiation effects to formulate a rigours treatment for the APD behavior. The results are validated against published experimental work in tem perature case and show good agreem ent.
关键词：Avalanche Photodiode; Neutron Radiation; ; Thermal Effects; Efficiency; and signal to noise ratio
