期刊名称：International Journal of Advanced Research in Computer Engineering & Technology (IJARCET)
印刷版ISSN：2278-1323
出版年度：2014
卷号：3
期号：3
页码：598-603
出版社：Shri Pannalal Research Institute of Technolgy
摘要：The control of short ¨C channel effects is more challenging with the progressive scaling of metal -oxide- semiconductor field ¨Ceffect-transistors (MOSFETs).The double ¨Cgate (DG) and gate ¨Call ¨Caround (GAA) MOSFET structures have emerged as main candidates to provide the electrostatic integrity needed to scale down MOSFET to minimal channel lengths. In addition to a better electrostatics than the single ¨C gate (SG) MOSFET, the use of these devices as advantages relative to the carrier transport, mainly due to Sentaurus MOCA(MOnte CArlo) using monte carlo simulation. More-over the introduction of new materials to enhance the mobility, as the strained silicon can result in electronic transport approaching the ballistic regime. The international roadmap for semiconductors (ITRS-200) has identified a series of challenges that must be solved before these devices can enter the manufacturing of MOSFET-based integrated circuits.
关键词：Sentaurus MOCA; monte carlo ; simulation; electrostatic integrity
