期刊名称：International Journal of Advanced Research in Computer Engineering & Technology (IJARCET)
印刷版ISSN：2278-1323
出版年度：2014
卷号：3
期号：8
页码：2709-2712
出版社：Shri Pannalal Research Institute of Technolgy
摘要：A review on different adiabatic approach for the 8t SRAM cell is presents in this paper. In this paper, 8T SRAM cell to perform the write and read operations which employs a single bit line scheme. An SRAM is considering in the most development stage today, with its different variations as well as to support low power application. Stability factor and Leakage power is becoming the most important factor on SRAM (Static Random Access Memory) cells. A novel 8T SRAM cell design is considering reducing the leakage and also reducing the stability issues as compare to 6T SRAM cell. Now by including adiabatic circuit into 8T SRAM cell is become a new promising approach on consumption of power. The different adiabatic SRAM circuits proposed in the resent years are outlined in this paper.
关键词：SRAM; Adiabatic technique; Power ; ; Dissipation; Energy Recovery; Bit line
