Indium tin oxide (ITO) films were grown using radio frequency (RF) sputtering technique. Conductivity or sheet resistance of the ITO films grown by this technique depends on various conditions such as the post annealing temperature, substrate temperature and the composition of the gas used for the deposition. Current work presents the study on the variation of sheet resistance by varying the conditions of growth. All the parameters such as post annealing temperature, substrate temperature and composition of gas used were found to affect the sheet resistance of ITO films.