期刊名称：International Journal of Advanced Research in Computer Engineering & Technology (IJARCET)
印刷版ISSN：2278-1323
出版年度：2012
卷号：1
期号：4
页码：085-088
出版社：Shri Pannalal Research Institute of Technolgy
摘要：A modified CMOS realization of ultra wideband low noise power amplifier is proposed in this paper. A method is presented for design of high frequency power amplifier using 45nm CMOS technology. Techniques including single stage amplifier with passive load, differential amplifier and operational trans-resistance are used. The goal is to highlight the efficient power amplifier architecture for achieving low power dissipation, noise at low power supply voltage. The unique behaviour of MOS transistors in sub threshold region allowed a designer to work at low input bias current with low voltage. Simulation result shows that power amplifier provides amplification up to 5GHz.Power consumption is 0.023mW with 1v supply.
