期刊名称：International Journal of Advanced Research in Computer Engineering & Technology (IJARCET)
印刷版ISSN：2278-1323
出版年度：2012
卷号：1
期号：4
页码：194-195
出版社：Shri Pannalal Research Institute of Technolgy
摘要：In the present paper we discuss the isotropic etching of various films such as Aluminum, Titanium, Silicon dioxide& Silicon Nitride The second section of this paper contains anisotropic etching of Silicon using Silicon Nitride as a mask. Various types of etchant are available.The etch rate depends upon the pH, concentration and temperature in anisotropic etching. In isotropic etching etch rate depends upon concentration of the acidic medium.
