期刊名称：International Journal of Advanced Research in Computer Engineering & Technology (IJARCET)
印刷版ISSN：2278-1323
出版年度：2012
卷号：1
期号：5
页码：251-255
出版社：Shri Pannalal Research Institute of Technolgy
摘要：Nanometer scale devices have the potential of replacing the CMOS based device as because of low power operation. Nanotechnology is the new and challenging field or technology of 21st century. Researchers were trying to scale the MOSFET to nano-metric scale from 180nm to 13 nm, but beyond 10nm the MOSFET faced quantum effects and thus the characteristic of normal MOSFET was altered to large extend. So, to cope up with technology development, researcher introduces new technology in which electronics work beyond 10 nm. The first transistor developed was SET, which used single electron for operation. The fundamental principle of SET device action is the coulomb blockade phenomena, which result in on or off states of this transistor. Inverter design using FINFET and SET has been done. Ring oscillators are probably the simplest type of oscillator used in RFIC design. They can be designed for a fixed frequency and variable frequency operation. Three stage ring oscillator for SET and FINFET has been designed using HSPICE and the waveform has observed. For SET based device the output waveform was unstable in the beginning with observable fluctuation but after a period of time it was stable. FINFET based circuit was stable compared to SET based. The Frequency for SET base oscillator has been calculated as 40.2 GHz and the frequency for FINFET based oscillator has been calculated as 38.6 GHz.
