期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2015
期号：MULTICON
页码：776
出版社：S&S Publications
摘要：Power has becoming a burning issue in modern VLSI design. Non volatile memories like MRAM,FeRAM , ReRAM etc can save power by allowing the system power off in standby state. MRAM can be built up byusing Magnetic Flip-flop like portable computer, Floppy disk, CD's etc. Comparing to the conventional Flip-flop STTMRAMcan save the power and retain the data by using 22 nm technology .Advanced computing systems suffer fromhigh static power due to rapidly rising leakage currents in deep sub-micron MOS technologies. In this paper performedelectrical simulations to validate its functional behaviors and evaluate its performance by using spice model of STTMRAM.Some mechanisms like checkpointing/power gating has been undergone in this NVM(non-volatile memories).There are numerous methods proposed to control leakage power dissipation. LECTOR is one of the techniques used forleakage reduction without affecting the dynamic power. The proposed design requires less design effort and offersgreater power reduction and smaller area cost than the previous method. in leakage power reduction when compared toall other existing leakage reduction techniques. Using this LECTOR technique, power efficiency becomes better.Thispaper presents the analysis for leakage current in Static RAM implementing LECTOR technique
