期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2013
卷号：2
期号：10
页码：5780
出版社：S&S Publications
摘要：In the fabrication of crystalline (mono and multi) silicon solar cells, p-type silicon wafers are diffused withphosphorous to form large area (240 Cm2) p-n junction, which is responsible for separation of photo generated carriers.During emitter diffusion process, phosphorous diffusion also takes place over the edges and rear side of the wafer. Thiscreates shunt paths between the front (n-type) and back (p-type) surface. These shunt paths cause reduction in solar cellefficiency. In the study presented here, Q-switched nanosecond 532 nm wavelength laser is used for isolating theshunts at the edges by scribing on either front or back side of cells. The effect of laser scribing parameters on groovecharacteristics is studied and optimized so as to get maximum efficiency of solar cells. From our results, we find thatlaser edge isolation process shows an enhancement of average output power of solar cells by 3.45% compared to theplasma edge isolation process. The laser edge isolation technique developed is suitable for inline production forindustrial applications and is environment friendly as no hazardous fluorine based chemicals are used.
