期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2016
卷号：5
期号：7
页码：13242
DOI：10.15680/IJIRSET.2016.0507090
出版社：S&S Publications
摘要：To extend the use of CMOS technology beyond 14 nm node technology, new device materials arerequired that can enhance the performance of MOSFETs. The use of high-k materials in double gate (DG) MOSFETcan triumph over the problem of power dissipation and leakage current. In this paper, we investigated various high-kdielectrics as the gate oxides in a 12 nm SOI FinFET and the performance potential of SiO2, SiON, Al2O3, Y2O3, HfO2and La2O3 gate dielectrics for Si based DG-FinFET has been explored based on 2-D numerical simulations. The resultsdemonstrate that La2O3 can replace SiO2, SiON, Al2O3, Y2O3 and HfO2 owing to its high transconductance, reducedsub-threshold swing (~ 40 %), increased threshold voltage and reduced DIBL (~ 81%).
