摘要：Pulse implementation or switching-off (PISO) of electrical currents has become a common operation in junction-temperature ( T j ) measurements for semiconductor devices since 2004. Here we have experimentally discovered a substantial discrepancy between T j values with, and without, PISO (e.g., 36.8 °C versus 76.5 °C above the ambient temperature at 25.0 °C). Our research indicates that methods associated with PISO are flawed due to non-synchronization of lattice temperatures and carrier temperatures in transient states. To scrutinize this discrepancy, we propose a lattice-inertia thermal anchoring mechanism that (1) explains the cause of this discrepancy, (2) helps to develop a remedy to eliminate this discrepancy by identifying three transient phases, (3) has been applied to establishing an original, accurate, and noninvasive technique for light-emitting diodes to measure T j in the absence of PISO. Our finding may pave the foundation for LED communities to further establish reliable junction-temperature measurements based on the identified mechanism.
