文章基本信息

标题：Si Interlayer Thickness Dependence of Hysteresis Loop in Co/Si/Co/GaAs(001)
其他标题：Si Interlayer Thickness Dependence of Hysteresis Loop in Co/Si/Co/GaAs(001)
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作者：J. Islam ; Y. Yamamoto ; E. Shikoh 等
期刊名称：Journal of Scientific Research
印刷版ISSN：2070-0237
电子版ISSN：2070-0245
出版年度：2012
卷号：4
期号：3
页码：561-567
DOI：10.3329/jsr.v4i3.10852
语种：English
出版社：Rajshahi University
摘要：Magnetic hysteresis loop changes from two-phase to single-phase with decreasing Si interlayer thickness in Co/Si/Co/GaAs. Coercive field of 50 nm Co deposited on Si layer decreases with the increase of Si interlayer thickness. Deposition of Au layer between Co and Si changes the magnetic hysteresis loop. We propose that the formation of cobalt silicides at the interface of Co and Si modulate magnetic properties of the trilayer without Au buffer layer.© 2012 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved.doi: http://dx.doi.org/10.3329/jsr.v4i3.10852 J. Sci. Res. 4 (3), 561-567 (2012)
关键词：Physics;Magnetic hysteresis; Interlayer; Co/Si/Co trilayer; Spins reversal; Two-phase hysteresis loop; Buffer layer.