文章基本信息

标题：Tetracene Based OTFT with Nd 2 O 3 -dielectric Layer
其他标题：Tetracene Based OTFT with Nd2O3-dielectric Layer
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作者：D. Saikia ; R. Sarma ; P. Saikia 等
期刊名称：Journal of Scientific Research
印刷版ISSN：2070-0237
电子版ISSN：2070-0245
出版年度：2010
卷号：2
期号：2
页码：214-220
DOI：10.3329/jsr.v2i2.4094
语种：English
出版社：Rajshahi University
摘要：Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10-4 cm2/V.s, ON-OFF ratio 3.3x102, sub-threshold swing 0.06 V/decade and hole concentration 8.74x1017 cm-3. Keywords: Organic thin film transistors; Tetracene; Rare earth oxide; Trap density. © 2010 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved. DOI: 10.3329/jsr.v2i2.4094 J. Sci. Res. 2 (2), 214-220 (2010)
关键词：Physics (Semiconductor devices; Materials Science; thin film);Organic thin film transistors; Tetracene; Rare earth oxide; Trap density.