期刊名称：Studia Universitatis Moldaviae: Stiinte Sociale
印刷版ISSN：1814-3199
电子版ISSN：2345-1017
出版年度：2009
卷号：1
期号：21
页码：193-196
出版社：Moldova State University
摘要：ITO-polycrystalline p-type silicon structures with surface barriers are obtained by pyrolytical spraying of indium and tin chloride solutions and their electrical and photoelectrical properties are studied. The spectral sensibility range, cur- rent transport mechanisms and the parameters of the heterostructure under forward and reverse bias are determined. It is shown the possibility of using these heterojunctions in solar radiation conversion
