期刊名称：Studia Universitatis Moldaviae: Stiinte Sociale
印刷版ISSN：1814-3199
电子版ISSN：2345-1017
出版年度：2009
卷号：1
期号：21
页码：197-202
出版社：Moldova State University
摘要：In this work is investigated the light absorption in the InSe layer of the heterostructure as well as the InSe layer from the interface of the junction Bi 2 O 3 -InSe through the absorption, re. ection spectrums and photoluminescence at tempera- tures from 78K to 300K. As a result of the thermic oxidation of a thin layer of Bi from the freshly sliced surface of the InSe crystal in the contact layer are formed two centers of localization of excitons and at the same time of the energy states by which is simulated the impurity luminescence
