期刊名称：Studia Universitatis Moldaviae: Stiinte Sociale
印刷版ISSN：1814-3199
电子版ISSN：2345-1017
出版年度：2008
卷号：2
期号：12
页码：217-220
出版社：Moldova State University
摘要：AlN layers on Si(111) were fabricated by Hydride Vapor Phase Eptaxy (HVPE). The obtained layers were studiedby using Raman spectroscopy and by scanning electron microscope (SEM). The layers surface is structured. The Ramanspectra of the layers, obtained at the temperatures of 800-1100oC, are presented. It was established that the layers aremechanically deformed in substrate plane and have a high value of the threshold voltage (are dielectrics).
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