期刊名称：International Journal of Grid and Distributed Computing
印刷版ISSN：2005-4262
出版年度：2016
卷号：9
期号：6
页码：289-298
DOI：10.14257/ijgdc.2016.9.6.27
出版社：SERSC
摘要：Scientific CMOS sensor usually manifests V/Q non-linearity in charge-to-voltage conversion. Starting from the mechanism underlying this non-linearity, we build the V/Q non-linearity model to study the influence of modulation transfer function (MTF) and signal-to-noise ratio (SNR). Meanwhile, simulation verification is carried out. The results show that V/Q non-linearity improves SNR but causes the decrease of MTF of the electronic device. We propose the combination of video response curve with photo response non-uniformity (PRNU) noise curve to locate V/Q non-linearity. The validity of this method is proved by simulation verification and physical experiment. The present study provides reference for design optimization and compensation for non-linearity in scientific CMOS sensor.
关键词：CMOS; V/Q non-linearity; modulation transfer function (MTF); signal-to- ; noise ratio (SNR)
